福井大学「テニュアトラック普及・定着事業」

Asubar Joel Tacla

研究者ページへ English/researchmap

学位:博士(工学)

研究テーマ

最新技術の構造およびプロセスを利用したGaN系トランジスタの電流コラプスの抑制

研究概要

地球温暖化対策として、温室効果ガスの削減が世界各地で行われています。温暖化対策として、電力消費を抑える革新的な技術創出を目指していかねばなりません。供給された電力を必要な形式の電力に変換・制御するためのパワーエレクトロニクス用半導体素子には主にシリコンSiを材料としたトランジスタ・ダイオードが用いられていますが、近年はワイドギャップ半導体の窒化ガリウムGaNに注目が集まっています。GaNはSiよりも1000分の1近くオン抵抗を低減することが可能なために熱損失を減らし電力消費を抑えることができます。我々の目標は、GaN系デバイスを基調とした高効率・高安定なパワーデバイスを実用化することによって、超低消費電力社会を実現することです。

研究業績

原著論文

  • AlGaN/GaN MIS-HEMTs with VTH = +5 V and IDmax > 400 mA/mm achieved using recessed-gate with regrown ultrathin AlGaN barrier Joel.T.Asubar, Shinsaku Kawabata, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
    IEEE Electron Device Letters (under revision)
  • On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods Mary Clare S. Escaño, Joel T. Asubar, Zenji Yatabe, Melanie Y. David, Hirokuni,Tokuda, Yukiharu Uraoka, Masaaki Kuzuhara, and Masahiko Tani
    Applied Surface Science (under revision)
  • Spatial distribution of substitutional Mn-As clusters in ferromagnetic (Zn,Sn,Mn)As2 thin films revealed by image reconstruction of atom probe tomography (EDITOR’S PICK) H. Oomae, H. Shinoda, J. T. Asubar, K. Sato, H. Toyota, K. Mayama, B. Medhiyev, and N. Uchitomi
    Journal of Applied Physics 125 (2019) 073902
  • Zenji Yatabe, Shinya Inoue, J.T.Asubar, and Seiya Kasai
    Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method
    Applied Physics Express 11 031201-1-031201-4 Jun 2018
  • Hirokuni Tokuda, Kosuke Suzuki, J.T.Asubar, and Masaaki Kuzuhara
    Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe
    Japanese Journal of Applied Physics 57 071001-1-071001-4 May 2018
  • Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors
    Applied Physics Express 11 054102-1-054102-5 Apr 2018
  • Naotaka Uchitomi, Shiro Hidaka, Shin Saito, Joel T. Asubar, and Hideyuki Toyota
    Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration
    Journal of Applied Physics 123 161566-1-161566-7 Apr 2018
  • Shintaro Ohi, Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    Correlation of AlGaN-GaN high-electron-mobility transistors electroluminescence characteristics with current collapse
    Applied Physics Express 11 024101-1-024101-14 Jan 2018
  • Kouichi Hayashi, Naotaka Uchitomi, Keitaro Yamagami, Akiko Suzuki, Hayato Yoshizawa,J.T.Asubar,Naohisa Happo, Shinya Hosokawa
    Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography
    Journal of Applied Physics 119 (12), 125703 Publication date 2016/3/28
  • J.T.Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda, T. Hashizume, and M. Kuzuhara
    Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors
    Accepted for publication in Applied Physics Express 8(11).111001(Nov2015)
  • J.T.Asubar,Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara
    Current Collapse Reduction in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing
    IEEE Transactions on Electron Devices 62(8), 2423(Aug2015)
  • J.T.Asubar, A. Suzuki, K. Akira, H. Tokuda, and M. Kuzuhara
    Multi-Grooved Field-Plate AlGaN/GaN HEMTs for Essentially Collapse-Free Operation without Drain Current Reduction Penalty
    submitted to International Electron Devices Meeting (IEDM).
  • J.T.Asubar,A. Suzuki, K. Akira, H. Tokuda, and M. Kuzuhara
    Multi-Grooved Field-Plate AlGaN/GaN HEMTs for Essentially Collapse-Free Operation without Drain Current Reduction Penalty
    submitted to International Electron Devices Meeting (IEDM)
  • Y. Suzuki, K. Tone,J.T.Asubar,M. Kuzuhara, and H. Tokuda
    High Drain Current and Low On-Resistance in AlGaN/GaN HEMTs with Au-Plated Ohmic Electrodes
    Proceedings of 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 52-53 (2015).
  • S. Yoshida, Y. Sakaida, J.T.Asubar,H. Tokuda, and M. Kuzuhara
    Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer
    Proceedings of 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 48-49 (2015).
  • A. Sasakura,J.T.Asubar,H. Tokuda, and M. Kuzuhara
    Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
    Proceedings of 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 42-43 (2015).
  • A. Suzuki, K. Akira,J.T.Asubar,H. Tokuda and M. Kuzuhara
    Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
    Proceedings of 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 36-37 (2015).
  • S. Ohi, Y. Sakaida,J.T.Asubar,H. Tokuda, and M. Kuzuhara
    Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
    Compound Semiconductor Manufacturing Technology Technical Digest (CS MANTECH 2015), 265-268 (May 2015).
  • Y.Kobayashi,J.T.Asubar,K. Yoshitsugu, H. Tokuda, M. Horita,Y. Uraoka, and M. Kuzuhara
    Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs
    Compound Semiconductor Manufacturing Technology Technical Digest (CS MANTECH 2015), 185-188 (May 2015).

マスコミ

  • イギリスのCompound Semiconductor(2015年7月号)という半導体雑誌に 〝高圧水蒸気処理によるAlGaN/GaN HEMTの電流コラプス改善〝に関する研究が掲載されました。
    内容はこちら CS COMPOUND SEMICONDUCTORへ
  • イギリスのCompound Semiconductor(2015年11-12月号、76ページ)という半導体雑誌に 〝Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors [Applied Physics Express 8 (11), 111001 (Nov 2015)]〝の論文が掲載されました。
    内容はこちら CSNovDec15.pdfへ(全83ページ)
  •  ジョエル先生のページ76はこちらから(画像をクリック)